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分離式大功率氮化鎵功率元件 (與Transphorm合作)
TP65H150G4LSG
(PQFN8x8)
The TP65H150G4LSG 650V 150mΩ GaN FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
TP65H300G4LSG
(QFN 8x8)
The TP65H300G4LSG 650V 240mΩ GaN FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon devices.
TP65H300G4JSGB
(QFN 5x6)
The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
TP65H070G4LSGB
(PQFN8x8)
The TP65H070G4LSGB 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.